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GaN discrete device

GaN分立器件

FEATURES

• Low RDSON

• High frequency

• Low gate charge

• Low output charge

ADVANTAGE

• Higher power density

• Higher switching frequency

• Less power loss

• AC-DC converter

• DC-DC converter

• Power Adapter

• Switch Mode Power source

PRODUCT PARAMETERS:

	VDS	RDSON	ID(25°C)	VTH	Package
E-mode	650V	480mΩ	8A	1.6V	DFN 56 DFN 88 PDFN 5*6
	650V	240mΩ	12A	1.6V
	650V	120mΩ	17A	1.6V
Cascode	650V	230mΩ	13A	1.8V	DFN 8*8 TO-220
Cascode	650V	125mΩ	23A	1.6V	DFN 8*8 TO-220

PRODUCT DRAWING:

GaN分立器件2.png